MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(TA
=25?C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3,4)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 500 mA, VGSB
=1.2Vdc,
Pout
= 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
?5MHzOffset.
Power Gain
Gps
15.0
16.0
18.0
dB
Drain Efficiency
?D
37.5
41.2
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
7.3
7.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
--31.9
--29.5
dBc
Typical Performance over Frequency
(3)
—
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 500 mA, VGSB
=1.2
Vdc, Pout
= 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
?5MHzOffset.
Frequency
Gps
(dB)
?D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.0
42.8
8.0
-- 3 1 . 0
1920 MHz
16.0
43.7
8.1
-- 3 2 . 6
2025 MHz
15.9
42.0
8.1
-- 3 1 . 2
Typical Performances
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 500 mA, VGSB
=1.2Vdc,
1880--2025 MHz Bandwidth
Pout
@ 1 dB Compression Point, CW
P1dB
—
140
—
W
Pout
@ 3 dB Compression Point
(5)
P3dB
—
170
—
W
IMD Symmetry @ 24 W PEP, Pout
where IMD Third Order
?
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
133
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
240
—
MHz
Gain Flatness in 145 MHz Bandwidth @ Pout
=24WAvg.
GF
—
0.25
—
dB
Gain Variation over Temperature
(--30?Cto+85?C)
?G
—
0.013
—
dB/?C
Output Power Variation over Temperature
(--30?Cto+85?C)
(6)
?P1dB
—
0.003
—
dB/?C
1. VDDA
and VDDB
must be tied together and powered by a single DC power supply.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Measurement made with device in straight lead
configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GHS) parts.
5. P3dB = Pavg
+ 7.0 dB where Pavg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF8P20161HSR3
IC MOSFET RF N-CHAN NI-780S
MRF8P20165WHSR3
FET RF LDMOS 28V 550MA NI780S4
MRF8P23080HSR3
FET RF N-CH 2.3GHZ 28V NI780S-4
MRF8P9040GNR1
IC MOSFET RF N-CHAN TO-270
MRF8P9300HSR6
FET RF N-CH 960MHZ 70V NI-1230HS
MRF8S18120HR5
MOSFET RF N-CH 120W NI-780
MRF8S18260HSR6
MOSFET RF N-CH 260W NI1230S-8
MRF8S19140HSR3
FET RF N-CH 1960MHZ 28V NI780HS
相关代理商/技术参数
MRF8P20140WHSR5
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20160HR3
功能描述:DISCRETE RF FET RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF8P20160HR5
功能描述:DISCRETE RF FET RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF8P20160HSR3
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20160HSR5
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20161HSR3
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20161HSR5
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20165WHR3
功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray